Based on Optilever laser scanning technology.

Use stress control to avoid film delamination and the formation of concave convex shapes.
Optical design reduces interference of graphic substrates with lasers.Control substrate curvature in TSV, semiconductor, and LED processes.
In the flat panel display industry, controlling the flatness of glass
In the LED industry, the BOW/WARP of sapphire or silicon carbide wafers can be analyzed, as well as the stress caused by different thin films in the LED process
On a standard piece with a curvature of 20 meters, the repeatability is less than 0.01 tolerance.
Dual wavelength laser design, if one wavelength laser has insufficient reflectivity in the sample, the system will automatically use another wavelength laser for scanning to meet the application of different materials
Fully automatic platform, capable of 2D and 3D scanning
Provide data points within the same product: 1000 points can be measured per inch, with an average of over 32 lines per wafer.
Provide a 3D stress distribution map.
Having a three-dimensional stress distribution map and a large number of data points enables users to detect local stress changes.
500 and 900 ° C high temperature or -50 ° C low temperature models are optional
Thermal analysis spectroscopy is optional.
The sample stage can be used for substrates ranging from 2 to 8 inches, and there are also models available that can accommodate samples with a diameter of 450mm or 370 X 470mm
Multiple models to choose from:
Manual loading and unloading)
Automatic cassette to cassette (C2C)
Can be added and integrated into multi cavity cluster tools