detailed description:

The thin film deposition growth rate monitoring system uses non-destructive laser technology to real-time in-situ detect the thin film deposition rate, thickness, and optical constants (n&k). It can be widely used for real-time in-situ monitoring of thin film deposition processes such as metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), sputtering system sputtering, and evaporation system.

Main features:

*Real time analysis of film deposition rate, film thickness, and optical constants (n&k), along with statistical analysis of standard deviation;

*Automated programmatic calibration;

*Precise real-time feedback system;

*Program control, real-time monitoring and control of multi-layer thin film deposition;

*Multi wafer monitoring function;

*Wafer substrate rotation monitoring and control function;

*Real time in-situ detection of all parameters;

*Easy and convenient operation and assembly;