detailed description:

RHEED analysis system（kSA 400 Analytical RHEED System）Suitable for various RHEED systems and thin film deposition systems (such as pulsed laser deposition equipment PLD, sputtering system Sputtering, molecular beam epitaxy MBE, metal organic chemical vapor deposition MOCVD, etc.)! At present, the fourth generation system combines high-quality hardware and software to provide customers with rich RHEED analysis information.

Over 500 users worldwideDomestic institutions such as Nanjing University, Institute of Semiconductors, Chinese Academy of Sciences, 11 Institute of Electronics, University of Science and Technology of China, Fudan University, Shanghai Institute of Technical Physics, etc;
KSA 400 Analytical RHEED System Data Download

Technical parameters:
CCD system: high speed, high resolution, and high sensitivity
Optical system: RHEED quantitative analysis and imaging analysis
• Standard interface flange

Main features:
Image analysis: Single image analysis (static analysis) mode, users can select multiple image modes, focus mode, scan mode, recording mode, interactive image overlay mode, 2D and 3D image analysis;
Real time diffraction fringe evolution monitoring and shooting;
Real time measurement of thin film deposition rate;
In situ surface diagnostic analysis
Powerful software analysis capabilities
RHEED oscillation tracking detection
• Scalable: Phase Locked Epitaxy (PLE), LEED, Auger/XPS, electron gun control and swing curve scanning;

Practical application: