Deep Level Transient Spectrometer (DLTS)
Deep Level Transient Spectroscopy is an important technical tool in the semiconductor field for studying and detecting semiconductor impurities, defects, deep energy levels, interface states, and so on. The deep level transient spectrum measured by the transient capacitance (△ C-t) technique of semiconductor P-N junction and gold half contact Schottky junction, as well as the emissivity window technique of deep level transient spectrum (DLTS), is an experimental method with extremely high detection sensitivity (usually one ten thousandth of the doping concentration in semiconductor materials), which can detect trace impurities, defects, deep level and interface states in semiconductors. By scanning the temperature of the sample, DLTS spectra can be obtained to characterize the distribution of impurities, defect deep energy levels, and interface states within the semiconductor bandgap range with temperature (i.e. energy). Integrating multiple fully automatic measurement modes and comprehensive data analysis can determine the type, content, and distribution of impurities with depth.
Semetrol DLTS integrates multiple automatic measurement modes and comprehensive data analysis, which can determine the type, content, and distribution of impurities with depth. It can also be used in the field of photovoltaic solar cells to analyze key impurity elements and lattice occupancy of impurity elements that affect minority carrier lifetime and conversion efficiency decay, and determine which doping elements and element occupancy affect minority carrier lifetime. This instrument measures interface states with fast speed and high accuracy, making it a widely applicable testing technology in production and scientific research

Main features:
• Automatic connection detection;
• Automatic capacitor compensation function;
• High detection sensitivity
• Transient current measurement;
Deep level transient spectrum analysis;

Application areas:
• Detect deep energy levels and interface states of trace impurities and defects in semiconductor materials such as Si, ZnO, GaN, etc.



Semetrol DLTS system configuration:
-Pulse generator
Voltage range: ±10 V (±102 V opt.)
Pulse width: 1 µ s -1000 s
-Capacitance measurement
High frequency signal: 50KHz
Capacitor range: 1pF-100nF

Sensitivity: 1 fF
-Voltage measurement:
Range ± 10 V
Sensitivity<1 µ V

Temperature range: 30K~700K
Resistance range: 0.1 mOhm -10 GOhm

Multiple measurement modes to choose from:
C-DLTS (Capacitive Mode)

O-DLTS (Light Excitation Mode)

I-DLTS (current mode)

DD-DLTS (Dual Association Mode)

Zerbst DLTS (Zerbst mode)

FET Analysis

MOS Analysis

ITS (Isothermal Transient Spectroscopy)

Trap profiling

CCSM (Capture Cross Sectional Measurement)

I/V, I/V (T) (Charlison Plot Analysis)

C/V, C/V(T)

TSC/TSCAP

PITS (Photon Induced Transient Spectroscopy)

DLOS (Special System)